Scaling characteristics of fNQS and ft in NMOSFETs with and without supply voltage scaling
نویسندگان
چکیده
Extensive process and device simulations are performed to investigate the nonquasi-static transition frequency (fNQS) behaviour of the NMOSFETs at different technology nodes, 0.5 μm to 90 nm, having same off-state leakage current (IOFF). These studies are done with and without supply voltage scaling. fNQS exhibits a turnaround in the 100 nm regime when we do the supply voltage scaling along with the transistor scaling. We attribute this effect to the reduced gate overdrive (VGS–Vt) and thereby to the degraded transconductance (gm). The unity gain frequency (ft) also shows a similar trend. The turnaround effect of fNQS and ft disappears when IOFF is allowed to go up or the gate overdrive is increased or both.
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